IXFB38N100Q2 mosfet equivalent, power mosfet.
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Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic re.
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30...120/7.5...27 N/lb 10 g
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Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specif.
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